In-situ Infrared H-Type Electrochemical Cell with Internal Reflection Model: CNB-12-IFA
In-situ Infrared H-Type Electrochemical Cell with Internal Reflection Model: CNB-12-IFA
In-situ Infrared H-Type Electrochemical Cell with Internal Reflection Model: CNB-12-IFA
In-situ Infrared H-Type Electrochemical Cell with Internal Reflection Model: CNB-12-IFA

In-situ Infrared H-Type Electrochemical Cell with Internal Reflection Model: CNB-12-IFA

$3,689.00
/
CNB-12-IFA

• Working Electrode: Single-crystal silicon
• Counter Electrode: Graphite
• Reference Electrode: Silver chloride-silver electrode
• Infrared Window: Single-crystal silicon
• Anode/Cathode Gas Inlet: Present
• Volume: <20ml, requires integration with compatible optical pathways
• Crystal: Si


(Among conventional infrared window materials such as Ge, ZnSe, and Si, Ge is relatively reactive. Cu and Ag thin film electrodes on Ge pillars usually yield suitable electrochemical responses only in the negative direction of the open circuit potential scan due to Ge's high anodic current during positive potential scans. This can mask the electrochemical response of metal electrodes, leading to the detachment of metal films. Similarly, ZnSe is unstable in acidic or alkaline solutions, making it unsuitable as a window material for electrochemical ATR-SEIRAS.)

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